M08800 - SEMI M88 - Practice for Sample Preparation Methods for Measuring Minority Carrier Diffusion Length in Silicon Wafers by Surface Photovoltage Methods Revision:SEMI M88-0119 - Current 本仕様は，global Liquid Chemicals Committeeで技術的に承認されている。現版は2010年8月27日，global Audits

本仕様は，global Liquid Chemicals Committeeで技術的に承認されている。現版は2010年8月27日，global Audits and Reviews Subcommitteeにて発行が承認された。2010年10月にwww

org in August 2011

5-0302 (Reapproved 0308)

This Test Method is particularly applicable to clean

M08800 - SEMI M88 - Practice for Sample Preparation Methods for Measuring Minority Carrier Diffusion Length in Silicon Wafers by Surface Photovoltage Methods Revision:SEMI M88-0119 - Current 本仕様は，global Liquid Chemicals Committeeで技術的に承認されている。現版は2010年8月27日，global AuditsShrinkage and advanced integration of semiconductor components demand lower metal contamination levels in component fabrication processes and in base silicon wafer substrates. The industry has for some time widely employed surface photovoltage (SPV) measurements of minority carrier diffusion lengths as a technique to assess metal impurities in silicon wafers. Samples, however, often require surface preparation prior to SPV measurements because SPV