Thermal Oxide Wafer:300nm SiO2 Layer on Si (100)100mm diax0.5 mm t,P type, 1SP R:0.001-0.005 ohm.cm Thermocouples Temperature Accuracy: +/- 2°C

Temperature Accuracy: +/- 2°C

Precision metering valves of stainless steel valves permit precise flow adjustments

The adhesion of the surface of the target substrate to graphene plays an important role in successful graphene transfer

24VDC motor

Thermal Oxide Wafer:300nm SiO2 Layer on Si (100)100mm diax0.5 mm t,P type, 1SP R:0.001-0.005 ohm.cm Thermocouples Temperature Accuracy: +/- 2°CThermal oxide Layer Research Grade , about 80 % useful area SiO2 layer on 100mm Silicon wafer Oxide layer thickness: 300 nm ( 3000A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: P type B doped Resistivity: R: 0. 001 0. 005ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 100mm+ 0. 5 mm x 0. 5 mm Orientation: (100) + 0. 5o Polish: