Ge Substrate (111) 10x10x 0.5 mm, 1 SP, N-type Undoped .R>50 ohm.cm Flanges This die can be modified

This die can be modified into a WIP die ( worm isostatic Pressing ) at the extra cost up to 90oC with heating tape and a programmable temperature controller ( Please click product option bar to order )

Bottom Pressing Rod Head Thickness: 7

Note: Max

Procedure for Testing Flow Cell - click the picture to enlarge

Ge Substrate (111) 10x10x 0.5 mm, 1 SP, N-type Undoped .R>50 ohm.cm Flanges This die can be modifiedSpecifications Growing Method: CZ Wafer Size: 10x10x0. 5 mm Surface Polishing: one side epi polished Orientation: (111) Surface roughness: < 8 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm EPD: N A Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater