MgO (100) Epi polishing wafer 2" Dia x0.5mm, 2SP - MGa50D05C2US CdTe & CdZnTe/CZT may damage the machine

may damage the machine

Carrier concentration:(1-3)x10^17  cm^-3

125 mm (+/-0

208-240VAC is also available upon request

MgO (100) Epi polishing wafer 2" Dia x0.5mm, 2SP - MGa50D05C2US CdTe & CdZnTe/CZT may damage the machineSpecifications of MgO substrate Size: 2" diameter x 0. 5mm + _ 0. 05 mm Orientation: (100) + 0. 5 Deg Polish: Two sides EPI polished by CMP technology with minimum sub surface damage. Surface finish (RMS or Ra): < 10A Packing: The substrate is packed with 100 grade clean plastic bag under 1000 class clean room Precautions: MgO is sensitive to moisture, and must be stored in vacuum box. Warning: MgO crystal was grown by arc melting method and nature