Al2O3 - Sapphire Wafer 5x5x0.5 mm, A plane (11-20), 1 SP - ALA050505S1 Separator Heating Rate: 5ºC/minute recommended

Heating Rate:                  5ºC/minute recommended

one  side polished

01 Non REO Impurity <0

Parts should not be placed directly onto the inside surface of a hot furnace tube increase of thermal shock

Al2O3 - Sapphire Wafer 5x5x0.5 mm, A plane (11-20), 1 SP - ALA050505S1 Separator Heating Rate: 5ºC/minute recommendedFeatures: Sapphire substrate is the popular substrates for III V nitrides, superconductor and magnetic epi film due to less mis matched lattice and stable chemical and physical properties Wafer size: 5 mm x 5 mm x 0. 5 mm thick Orientation tolerance: + 0. 5 Deg. A plane orientation Polished surface: One side EPI polished via a special CMP procedure with Ra < 5 A Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with