US$ 500.00
GaAs( LEC ) Wafer (110) undoped Semi-Insulated 2"D x 2.8 mm, as cut Ceramic Coatings and Adhesives Impurity: MgO < 0
$574.42
Description
Impurity: MgO < 0
70 m3/h The rotation speed at 50 Hz 1500 RPM The rotation speed at 60 Hz 1800 RPM Switch Yes
Modle EQ-Die-32D Die Sleeve Height 2" (50 mm) Outside Diameter 2
(1-102) R-plane orientation +/-0
GaAs( LEC ) Wafer (110) undoped Semi-Insulated 2"D x 2.8 mm, as cut Ceramic Coatings and Adhesives Impurity: MgO < 0GaAs single crystal wafer Growing Method: LEC Orientation: (110) Size: 2" dia x 2. 8 mm Polishing: As Cut Doping: undoped Conductor type: Semi Insulating Resistivity: >1 x 107 Ohm. cm Mobility: 4500 cm 2 V. S Carrire Concentration: <1 x108 cm^ 3 EPD: < 5x104 cm 2 Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
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