VGF-GaAs (100) orientation, Zn-doped 10x10x0.625 mm, 1sp YSZ (Yittrium stabilized ZrO2) Removal Strength from Tab

Removal Strength from Tab

MTI does not manufacture this product

Phenolic black caps included

Parts should not be placed directly onto the inside surface of a hot furnace tube increase of thermal shock

VGF-GaAs (100) orientation, Zn-doped 10x10x0.625 mm, 1sp YSZ (Yittrium stabilized ZrO2) Removal Strength from TabGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 10x10x0. 625mm Polishing: one side polished Doping: Zn doped Conductor type: P type Carrier Concentration: (1. 3 2. 2) x 10^19 cm^3 Mobility: 64 75 cm^2 V. S EPD: <5000 cm^2 resistivity: (4. 5 6. 7)x10^ 3 ohm. cm Ra(Average Roughness) : < 0. 4 nm Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces