Si wafer (100), 3 "dia x0.381 mm, 1sp, N type, P-doped, R:5-10 ohm.cm - SIPa76D0381C1R5 Bi Orientation: (111) +/0

Orientation: (111) +/0

Front Surface finish (Ga-face):    <1nm RMS

<0001>  +/- 0

Vacuum pressure can reach 10-5 torr with a suitable pump

Si wafer (100), 3 "dia x0.381 mm, 1sp, N type, P-doped, R:5-10 ohm.cm - SIPa76D0381C1R5 Bi Orientation: (111) +/0Single crystal Si Conductivity: N type ( P doped) Resistivity: 5 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 3" diameter x 0. 381 mm Orientation: (100) Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film