Ga2O3-Beta Single Crystal Substrate, <100>+/-1 degree N-type ,Sn-doped 10x10x0.5mm, 1SP S Surface Finish: two sides Epi-

Surface Finish: two sides Epi- polished Ra<=0

Specifications:    Research Grade

Click the picture below to see how to place the spacer and spring into button case:

or gas pressure unit can be used

Ga2O3-Beta Single Crystal Substrate, <100>+/-1 degree N-type ,Sn-doped 10x10x0.5mm, 1SP S Surface Finish: two sides Epi-Substrate Specifications: Chmistry: Ga2O3 Structure: Monoclinic Lattice Constant: a=12. 23A, b=3. 04A, c=5. 80A, =103. 7 Orientation: <100> + 1 ( Please pay attention a, b, c axis defination above ) Type Dopant: N type ,Sn doped Size: 10x10 x 0. 5 mm Polish: one side polished Resistivity: <0. 01 ohm. cm Surface roughness: < 15A Useful Area: >80%