LSAT (110) 2" x0.5 mm wafer --- 1 side epi polished - LSATe50D05C1 Tube Furnaces (+/-05o) with Standard Flat

(+/-05o) with Standard Flat

Formation conditions: 25°C

1 E16 cm^-3

96) x 10^18/cm^3

LSAT (110) 2" x0.5 mm wafer --- 1 side epi polished - LSATe50D05C1 Tube Furnaces (+/-05o) with Standard FlatLSAT (LaAlO3)0. 3 (Sr2AlTaO6)0. 7 is a newly developing crystal with a perovskite structure and is twin free. LSAT has excellent lattice match with high Tc superconductors and many oxide materials. LSAT has lower melting point and can be grown by CZ technology at a lower cost, therefore, it is expected to replace LaAlO3 and SrTiO3 as a common single crystal substrate for epitaxial oxide thin films for gain magnetic ferro electronic and superconductive