High Purity Silicon Carbide (SiC) Tube: 50 OD x 38 ID x 1000 L (mm) - TSC50D1000L CsI(Tl) EPI Film :

EPI Film :

because it has a lapped glass surface and < flatness of +/- 2 microns

The sturdy table measures 6" x 10"

Crystal growth method

High Purity Silicon Carbide (SiC) Tube: 50 OD x 38 ID x 1000 L (mm) - TSC50D1000L CsI(Tl) EPI Film :Specifications: Purity: > 98. 5% Temperature (Air): 1700C Max. Density: ? 3. 14kg m3 Thermal Conductivity: 160W (m*K) Thermal Expansion Coefficient: 4. 3K 1 x 10 6 Dimension: 50 OD x 38 ID x 1000 L (mm) To get a longer tube service life, please use quartz or alumina crucibles to carry the sample, instead of loading the sample directly inside the tube. Please click the picture below to choose one crucible boat: Inspect your delivery: Please check the