FZ Si Wafer (100), 2" dia x 0.3 mm, 1SP, P type, B doped R>1000 ohm-cm Cylindrical Cell Center hole 1
$114.94
Description
Center hole 1
of inner nozzle: 21G (0
Surface finish (RMS or Ra) : < 5A
One steel cylinder for releasing out a sample
FZ Si Wafer (100), 2" dia x 0.3 mm, 1SP, P type, B doped R>1000 ohm-cm Cylindrical Cell Center hole 1Single crystal FZ Si Conductive type: P type Boron doped Resistivity: >1000 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 2'' diameter x 0. 3 mm Orientation: (100) Polish: one side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw
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