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GaAs ,Growing Method: VGF (111)B , SI, undoped, 100mm dia x 0.625 mm, 1 sp Ceramic Coatings and Adhesives Agate Milling Ball
GaAs ,Growing Method: VGF (111)B , SI, undoped, 100mm dia x 0.625 mm, 1 sp Ceramic Coatings and Adhesives Agate Milling Ball
$275.43
Description
Agate Milling Ball
Radiation length (cm)
Other ITO Film
Centrifugal Acceleration Revolution: 30-350 rpm
GaAs ,Growing Method: VGF (111)B , SI, undoped, 100mm dia x 0.625 mm, 1 sp Ceramic Coatings and Adhesives Agate Milling BallGaAs single crystal wafer Growing Method: VGF Orientation: (111)B Primary Flat: EJ(0 11)+ 0. 5 deg; Secondary Flat: EJ( 211) Size: 100mm dia x 0. 625mm Polishing: One side polished Doping: undoped Conductor type: Semi Insulating Resistivity:(1. 52 2. 19)E8 ohm. cm Carrier Concentration: N A Mobility: (5690 5970) cm^2 V. S EPD: N A Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers
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