Si wafer (111), 6 " dia x 0.65 - 0.7 mm, 1SP P type ( B doped) with resistivities: 1-10 ohm-cm Ga Porosity: 80%

Porosity: 80%

except for defective as received

08mm thickness) - EQ-bcnf-80um

Diamond wire cutting is a state of the art technology to slice single crystal wafer or substrate

Si wafer (111), 6 " dia x 0.65 - 0.7 mm, 1SP P type ( B doped) with resistivities: 1-10 ohm-cm Ga Porosity: 80%Silicon Single crystal wafer (111) orientation 6" Diameter x 0. 65 0. 7 mm P type, boron doped Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) One side polished Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater