GaAs, Growing Method: VGF (111)B, Si-doped, 2" dia x 0.35mm, 2sp - GASicB50D035C2US Cathode

GaAs, Growing Method: VGF (111)B, Si-doped, 2" dia x 0.35mm, 2sp - GASicB50D035C2US CathodeGaAs single crystal wafer Growing Method: VGF Orientation: (111)B Primary Flat: EJ(0 11)+ 0. 5 deg; Secondary Flat: EJ( 211) Size: 2" dia x 0. 35mm Polishing: Two sides polished Doping: Si doped Conductor type: S C N Resistivity:(1. 5 4. 1)E 3 ohm. cm Carrier Concentration: (0. 6 2. 4)x10^18 c. c Mobility: 1750 2450 cm^2 V. S EPD: N A Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers

Polishing:                          two sides polished

Casing: SS304 or SS316

Special Hydrogenated Nitrile (HNBR) compounds can improve resistance to direct ozone

2KW Power requirement AC 220 V +/- 10%

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Specifications: Size:               5mm x 5mm x 0

MTI will replace the unsatisfied substrate which has no film grown and no damage free of charge until you are satisfied within 15 days after receiving it

Monocrystalline Al2O3 Sapphire ( single crystal of Al2O3 ) is being used extensively as a substrate for III-V nitrides and for many other epitaxial films

Conductor type:                 S-C-P

Two-wave mixing coupling constant: 10 -40  cm-1 Absorption loss:

Used to Indicate & Manually control Air or Gas flow Max 2000 cc/min

about 5 mm x 5 mm x 0