Growth Method CZ (LEC) Density 4. 13 g cm3 Melt Point 1480 oC Thermal Expansion 5. 3 x10 6 oC Dopant S doped undoped Crystal growth axis <111> or"> Growth Method CZ (LEC) Density 4. 13 g cm3 Melt Point 1480 oC Thermal Expansion 5. 3 x10 6 oC Dopant S doped undoped Crystal growth axis <111> or"> Growth Method CZ (LEC) Density 4. 13 g cm3 Melt Point 1480 oC Thermal Expansion 5. 3 x10 6 oC Dopant S doped undoped Crystal growth axis <111> or"> GaP Wafer, undoped (111) 2"x0.5 mm, 1sp - GPUc50D05C1 Li1.5Al0.5Ge1.5P3O12 Dimension: 100 mm (+/-0 – www.insurehill.com

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GaP Wafer, undoped (111) 2"x0.5 mm, 1sp - GPUc50D05C1 Li1.5Al0.5Ge1.5P3O12 Dimension: 100 mm (+/-0

$332.93

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Dimension:  100 mm (+/-0

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YSZ Ceramic Substrate  ( Polycrystaline ceramic of 3

4 strip spacer with 25 mm width at each

GaP Wafer, undoped (111) 2"x0.5 mm, 1sp - GPUc50D05C1 Li1.5Al0.5Ge1.5P3O12 Dimension: 100 mm (+/-0GaP single crystal wafer, Size: 2" diameter(+ _0. 15mm) x 0. 5mm(+ _ 0. 05mm), Doping: undoped, Conducting type: N type, Orientation: (111)+_30' Edge Orientation: (110)1 Polished: One side polished. Surface finish (RMS or Ra) : < 8A Typical Physical Properties Crystal Structure Cubic. a =5. 4505 ?7 FONT> Growth Method CZ (LEC) Density 4. 13 g cm3 Melt Point 1480 oC Thermal Expansion 5. 3 x10 6 oC Dopant S doped undoped Crystal growth axis <111> or

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