SiO2+Ti+Pt thin film on Si substrate ,10x5x0.5mm,1sp,B-doped,( SiO2=500nm,Ti=50nm ,Pt=200nm) Cathode Thermal Expansion: 6

Thermal Expansion:                           6

Resistivity:              1-10 ohm-cm (If you would like to measure the resistivity accurately

or corrosive

5% Micromorphology Powdery particles Appearance Black powder

SiO2+Ti+Pt thin film on Si substrate ,10x5x0.5mm,1sp,B-doped,( SiO2=500nm,Ti=50nm ,Pt=200nm) Cathode Thermal Expansion: 6Silicon Wafer Specifications: Conductive type: SiO2+Ti+Pt thin film on Si(B doped) substrate ,10x5x0. 5mm,1sp( SiO2=500nm,Ti=50nm ,Pt=200nm) Resistivity: <0. 005 ohm. cm Size: 10x5 x 0. 5 mm Polish: one side polished Surface roughness: < 5A, RMS Related Products Thin Films A Z Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater